N-Channel Power MOSFET featuring a low on-resistance of 0.0078 ohms and a continuous drain current capability of 75A. This silicon metal-oxide semiconductor field-effect transistor operates up to a maximum junction temperature of 175°C and supports a drain-source voltage of 75V. Designed with a single element and a D2PAK-3 plastic package, it offers a lead-free construction.
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Technical Specifications
Infineon IRF1407STRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF1407STRLPBF Datasheet
Download the complete datasheet for Infineon IRF1407STRLPBF to view detailed technical specifications.
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