This device is an N-channel HEXFET power MOSFET rated for 40 V drain-to-source voltage in a TO-220AB lead-free package. It is specified with 2.3 mΩ maximum drain-to-source on-resistance for the TO-220 version at VGS = 10 V and ID = 75 A, and supports 75 A continuous drain current at TC = 25°C. The MOSFET is designed for fast switching and repetitive avalanche operation, with 175°C maximum junction temperature and ±20 V gate-to-source rating. Typical dynamic characteristics include 160 nC total gate charge, 6450 pF input capacitance, and 56 ns typical reverse recovery time.
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Infineon IRF2804PBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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