N-Channel Power MOSFET featuring a 75A continuous drain current and 55V drain-source voltage. This single-element, silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0047 ohms. Encased in a TO-263AB (D2PAK-3) plastic package, it operates up to a maximum temperature of 175°C.
Quick Jump:
Technical Specifications
Infineon IRF2805STRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF2805STRLPBF Datasheet
Download the complete datasheet for Infineon IRF2805STRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.