This device is an N-channel power MOSFET rated for 100 V drain-to-source voltage and 59 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 18 mΩ at 10 V gate drive and supports operation to a 175°C junction temperature. The transistor features fast switching, dynamic dv/dt rating, and repetitive avalanche capability up to the maximum junction temperature. It is offered in the TO-220AB package and is identified in the datasheet as a lead-free HEXFET power MOSFET.
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Infineon IRF3710ZPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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