N-channel power MOSFET featuring 100V drain-source voltage and continuous drain current of 59A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.018 ohms. Designed with a single element and housed in a TO-263AB D2PAK plastic package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRF3710ZSTRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF3710ZSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF3710ZSTRLPBF to view detailed technical specifications.
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