N-channel power MOSFET featuring 100V drain-source voltage and continuous drain current of 59A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.018 ohms. Designed with a single element and housed in a TO-263AB D2PAK plastic package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRF3710ZSTRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF3710ZSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF3710ZSTRLPBF to view detailed technical specifications.
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