N-Channel Power MOSFET featuring a low on-resistance of 0.0026 ohms and a continuous drain current capability of 160A. This single-element silicon Metal-oxide Semiconductor FET operates up to a maximum temperature of 175°C and has a drain-source voltage rating of 55V. Designed with 6 terminals, this component is housed in a D2PAK-7 package.
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| Max Operating Temperature | 175 |
| Number of Terminals | 6 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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