P-channel power MOSFET featuring 55V drain-source voltage and 42A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.02 ohms. Designed with a single element and packaged in a TO-263AB (D2PAK-3) surface-mount package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRF4905STRRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF4905STRRPBF Datasheet
Download the complete datasheet for Infineon IRF4905STRRPBF to view detailed technical specifications.
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