P-channel power MOSFET featuring 55V drain-source voltage and 42A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.02 ohms. Designed with a single element and packaged in a TO-263AB (D2PAK-3) surface-mount package, it operates up to a maximum temperature of 150°C.
Quick Jump:
Technical Specifications
Infineon IRF4905STRRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF4905STRRPBF Datasheet
Download the complete datasheet for Infineon IRF4905STRRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.