Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
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Infineon IRF520N technical specifications.
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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