Infineon
IRF520NS
Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
Quick Jump:
Technical Specifications
Infineon IRF520NS technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.29.00.75
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF520NS Datasheet
Download the complete datasheet for Infineon IRF520NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.