P-channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current of 40A and a drain-source voltage of 100V. Offers a low on-resistance of 0.06 ohms. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB lead-free package with 3 terminals.
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Technical Specifications
Infineon IRF5210PBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF5210PBF Datasheet
Download the complete datasheet for Infineon IRF5210PBF to view detailed technical specifications.
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