P-channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current of 40A and a drain-source voltage of 100V. Offers a low on-resistance of 0.06 ohms. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB lead-free package with 3 terminals.
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Technical Specifications
Infineon IRF5210PBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF5210PBF Datasheet
Download the complete datasheet for Infineon IRF5210PBF to view detailed technical specifications.
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