N-Channel Power MOSFET featuring 100V drain-source voltage and a continuous drain current of 17A. This single-element silicon device offers a low on-resistance of 0.09 ohms. Designed for high-power applications, it utilizes Metal-oxide Semiconductor Field-Effect Transistor technology. The component is constructed with a lead-free, plastic D2PAK-3 package.
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Technical Specifications
Infineon IRF530NSTRLPBF technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF530NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF530NSTRLPBF to view detailed technical specifications.
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