N-Channel Power MOSFET featuring 100V drain-source voltage and 33A continuous drain current. This silicon Metal-Oxide-Semiconductor Field-Effect Transistor offers a low on-resistance of 0.044 ohms. Designed with a single element and three terminals, it operates across a wide temperature range from -55°C to 175°C. The component is housed in a TO-220AB package with a lead-free finish.
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Technical Specifications
Infineon IRF540NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF540NPBF Datasheet
Download the complete datasheet for Infineon IRF540NPBF to view detailed technical specifications.
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