N-Channel Power MOSFET featuring a continuous drain current of 33A and a drain-source voltage of 100V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.044 ohms. Designed for high-temperature operation up to 175°C, it utilizes a single-element configuration within a D2PAK-3 (TO-263) plastic package.
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Technical Specifications
Infineon IRF540NSTRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF540NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF540NSTRLPBF to view detailed technical specifications.
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