N-Channel Power MOSFET featuring a continuous drain current of 33A and a drain-source voltage of 100V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.044 ohms. Designed for high-temperature operation up to 175°C, it utilizes a single-element configuration within a D2PAK-3 (TO-263) plastic package.
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Technical Specifications
Infineon IRF540NSTRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF540NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF540NSTRLPBF to view detailed technical specifications.
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