N-channel automotive power MOSFET rated for 100 V drain-to-source voltage and 36 A continuous drain current at 25°C case temperature. It uses the HEXFET process to achieve a maximum 26.5 mΩ drain-to-source on-resistance at VGS = 10 V and supports operation up to 175°C junction temperature. The device includes an integral body diode, fast switching characteristics, and repetitive avalanche capability up to Tjmax. It has a ±20 V gate-to-source rating and is offered in a TO-220AB package.
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Infineon IRF540ZPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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