Infineon
IRF5EA1310
Power Field-Effect Transistor, 23A I(D), 100V, 0.036ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28
Power Field-Effect Transistor, 23A I(D), 100V, 0.036ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-28
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Technical Specifications
Infineon IRF5EA1310 technical specifications.
General
| Number of Terminals | 28 |
| Terminal Position | QUAD |
| Number of Elements | 4 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF5EA1310 Datasheet
Download the complete datasheet for Infineon IRF5EA1310 to view detailed technical specifications.
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