Infineon
IRF630NS
Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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Technical Specifications
Infineon IRF630NS technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF630NS Datasheet
Download the complete datasheet for Infineon IRF630NS to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.