N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.15ohm. Designed for high-temperature operation up to 175°C, with a minimum operating temperature of -55°C. Encased in a TO-263AB (D2PAK-2/3) plastic package with lead-free termination.
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Technical Specifications
Infineon IRF640NSTRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRF640NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF640NSTRLPBF to view detailed technical specifications.
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