N-Channel Power MOSFET featuring 200V drain-source voltage and 18A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.15ohm. Designed for high-temperature operation up to 175°C, with a minimum operating temperature of -55°C. Encased in a TO-263AB (D2PAK-2/3) plastic package with lead-free termination.
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Technical Specifications
Infineon IRF640NSTRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF640NSTRLPBF Datasheet
Download the complete datasheet for Infineon IRF640NSTRLPBF to view detailed technical specifications.
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