N-channel power MOSFET featuring 40V drain-source voltage and 19A continuous drain current. This single-element silicon device offers a low on-resistance of 0.005 ohms. Designed with a 3-terminal bottom terminal configuration, it utilizes metal-oxide semiconductor field-effect transistor technology. ROHS compliant and presented in an isometric-3 package.
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Infineon IRF6616TRPBF technical specifications.
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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