Infineon
IRF6618
Power Field-Effect Transistor, 30A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Quick Jump:
Technical Specifications
Infineon IRF6618 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.29.00.75
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6618 Datasheet
Download the complete datasheet for Infineon IRF6618 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.