Infineon
IRF6644TR1PBF
Power Field-Effect Transistor, 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET,
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Technical Specifications
Infineon IRF6644TR1PBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-40
Terminal Position
BOTTOM
Number of Elements
1
Compliance
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6644TR1PBF Datasheet
Download the complete datasheet for Infineon IRF6644TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.