N-Channel Power MOSFET featuring 60V drain-source voltage and 86A continuous drain current. This single-element silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.007 ohms. Designed for high-power applications, it operates within a temperature range of -40°C to 150°C and has three terminals with bottom positioning. ROHS compliant.
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Technical Specifications
Infineon IRF6648TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6648TRPBF Datasheet
Download the complete datasheet for Infineon IRF6648TRPBF to view detailed technical specifications.
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