Power Field-Effect Transistor, 8.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-3
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Infineon IRF6662TRPBF technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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