Infineon
IRF6665
Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
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Technical Specifications
Infineon IRF6665 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6665 Datasheet
Download the complete datasheet for Infineon IRF6665 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.