N-channel StrongIRFET power MOSFET supports a 150 V maximum drain-source voltage and 28 A maximum drain current at 25 °C. The device has a maximum on-resistance of 56 mΩ at 10 V gate drive and a typical total gate charge of 25 nC. It is supplied in a surface-mount DirectFET M package with MG-WDSON-5 package designation. The MOSFET is rated for operation from -40 °C to 150 °C and has a maximum junction temperature of 150 °C. Tape-and-reel packing is specified with a 4800-piece packing size, and the active recommended orderable version is RoHS-compliant, lead-free, and halogen-free.
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| Transistor Type | N-channel MOSFET |
| Technology | IR MOSFET™ / StrongIRFET™ |
| Drain-Source Voltage Max | 150V |
| Drain Current Max at 25°C | 28A |
| On Resistance Max at 10 V | 56mΩ |
| Total Gate Charge Typical at 10 V | 25nC |
| Gate-Drain Charge | 6.6nC |
| Gate-Source Threshold Voltage Range | 3 to 5V |
| Gate-Source Threshold Voltage | 4V |
| Gate-Source Voltage Max | 20V |
| Total Power Dissipation Max | 89W |
| Power Dissipation Max at TA=25°C | 2.8W |
| Thermal Resistance Junction-to-Case Max | 1.4K/W |
| Junction Temperature Max | 150°C |
| Operating Temperature Range | -40 to 150°C |
| Mounting | SMD |
| Package | DirectFET (M) |
| Infineon Package | MG-WDSON-5 |
| Moisture Sensitivity Level | 1 |
| RoHS | Yes |
| Lead-free | Yes |
| Halogen-free | Yes |
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