Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Infineon IRF7101 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | not_compliant |
| Military Spec | False |
No datasheet is available for this part.
