Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Infineon IRF7103 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
