N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor designed for power applications. Features a continuous drain current (I(D)) of 3A and a maximum drain-source voltage (V(DS)) of 50V. Offers a low on-resistance of 0.13 ohms. This dual-element device has 8 terminals and operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRF7103TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7103TRPBF Datasheet
Download the complete datasheet for Infineon IRF7103TRPBF to view detailed technical specifications.
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