N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor designed for power applications. Features a continuous drain current (I(D)) of 3A and a maximum drain-source voltage (V(DS)) of 50V. Offers a low on-resistance of 0.13 ohms. This dual-element device has 8 terminals and operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRF7103TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7103TRPBF Datasheet
Download the complete datasheet for Infineon IRF7103TRPBF to view detailed technical specifications.
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