Dual N-Channel Power MOSFET featuring 30V drain-source voltage and 4.9A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low on-resistance of 0.05 ohms. Housed in an 8-terminal SOP-8 package (JEDEC MS-012AA), it integrates two discrete MOSFET elements for versatile power switching applications.
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Technical Specifications
Infineon IRF7303TRPBF technical specifications.
General
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.29.00.95
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7303TRPBF Datasheet
Download the complete datasheet for Infineon IRF7303TRPBF to view detailed technical specifications.
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