This device is a dual P-channel power MOSFET with a maximum drain-source voltage of -30 V in an SO-8 package. It provides up to -3.6 A continuous drain current and a maximum drain-source on-resistance of 100 mΩ. The datasheet specifies operation over a -55 °C to 150 °C junction temperature range and a maximum power dissipation of 2.5 W at 25 °C. It is designed for load management and power conversion applications where compact board area and low on-resistance are important.
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Infineon IRF7306TRPBF technical specifications.
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
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