N-channel silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current of 5.1A and a maximum drain-source voltage of 55V. Offers a low on-resistance of 0.05 ohms. This dual-element device is housed in an 8-terminal MS-012AA (SOP-8) package, with a maximum operating temperature of 150°C.
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Technical Specifications
Infineon IRF7341TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7341TRPBF Datasheet
Download the complete datasheet for Infineon IRF7341TRPBF to view detailed technical specifications.
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