Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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Infineon IRF7379TRPBF technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 2 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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