N-Channel Power MOSFET featuring 80V drain-source voltage and 3.6A continuous drain current. This silicon Metal-Oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.073 ohms. Designed with two elements and eight terminals, it utilizes a DUAL terminal position within the MS-012AA JEDEC package. Maximum operating temperature reaches 150°C.
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Technical Specifications
Infineon IRF7380TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| JEDEC Package Code | MS-012AA |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7380TRPBF Datasheet
Download the complete datasheet for Infineon IRF7380TRPBF to view detailed technical specifications.
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