N-channel power MOSFET featuring 30V drain-source voltage and 2.4A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.135 ohms. Designed with two elements and eight terminals in a MICRO-8 package, it provides dual terminal positioning for efficient integration.
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Technical Specifications
Infineon IRF7503TRPBF technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7503TRPBF Datasheet
Download the complete datasheet for Infineon IRF7503TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.