Dual-element N-channel and P-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a continuous drain current (I(D)) of 2.7A and a drain-source voltage (V(DS)) of 30V. Packaged in an 8-terminal SOIC configuration, this JFET offers versatile performance for electronic circuits.
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Technical Specifications
Infineon IRF7509TRPBF technical specifications.
General
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7509TRPBF Datasheet
Download the complete datasheet for Infineon IRF7509TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.