
N-channel Power MOSFET featuring a 40V drain-source voltage and 46A continuous drain current. This surface-mount component utilizes DirectFET process technology, housed in a 15-pin Direct-FET L8 package with no leads. Key specifications include a maximum drain-source resistance of 1 mOhm at 10V, typical gate charge of 220 nC at 10V, and typical input capacitance of 11880 pF at 25V. Maximum power dissipation is 3800 mW, with an operating temperature range of -55°C to 175°C.
Infineon IRF7739L2TRPbF technical specifications.
| Basic Package Type | Lead-Frame SMT |
| Package/Case | Direct-FET L8 |
| Package Description | Metal Can Direct FET Package |
| Lead Shape | No Lead |
| Pin Count | 15 |
| PCB | 15 |
| Package Length (mm) | 7.1(Max) |
| Package Width (mm) | 9.15(Max) |
| Package Height (mm) | 0.49(Max) |
| Seated Plane Height (mm) | 0.74(Max) |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Hex Drain Octal Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DirectFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 46A |
| Material | Si |
| Maximum Drain Source Resistance | 1@10VmOhm |
| Typical Gate Charge @ Vgs | 220@10VnC |
| Typical Gate Charge @ 10V | 220nC |
| Typical Input Capacitance @ Vds | 11880@25VpF |
| Maximum Power Dissipation | 3800mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Download the complete datasheet for Infineon IRF7739L2TRPbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.