Infineon
IRF7831PBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Technical Specifications
Infineon IRF7831PBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
1
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7831PBF Datasheet
Download the complete datasheet for Infineon IRF7831PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.