Infineon
IRF9952PBF
Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Technical Specifications
Infineon IRF9952PBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Min Operating Temperature
-55
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF9952PBF Datasheet
Download the complete datasheet for Infineon IRF9952PBF to view detailed technical specifications.
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