P-channel power MOSFET featuring 55V drain-source voltage and 19A continuous drain current. This silicon Metal-oxide Semiconductor Field-Effect Transistor offers a low on-resistance of 0.1 ohm. Designed with a single element and three terminals, it is housed in a TO-220AB package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Infineon IRF9Z34NPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF9Z34NPBF Datasheet
Download the complete datasheet for Infineon IRF9Z34NPBF to view detailed technical specifications.
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