P-channel MOSFET, 1-element silicon power transistor featuring a drain current of 19A and a drain-source voltage of 55V. Achieves a low on-resistance of 0.1 ohm. Designed with a D2PAK-3 plastic package for efficient heat dissipation. This metal-oxide semiconductor field-effect transistor is lead-free.
Sign in to ask questions about the Infineon IRF9Z34NSTRLPBF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IRF9Z34NSTRLPBF technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRF9Z34NSTRLPBF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
