P-channel MOSFET, 1-element silicon power transistor featuring a drain current of 19A and a drain-source voltage of 55V. Achieves a low on-resistance of 0.1 ohm. Designed with a D2PAK-3 plastic package for efficient heat dissipation. This metal-oxide semiconductor field-effect transistor is lead-free.
Infineon IRF9Z34NSTRLPBF technical specifications.
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
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