This N-channel silicon power MOSFET is rated for 200 V drain-to-source voltage and 56 A continuous drain current at 25°C. It provides a maximum drain-to-source on-resistance of 0.040 Ω at VGS = 10 V and is housed in a TO-220AB through-hole package. The device supports junction operation from -55°C to +175°C, gate-to-source voltage up to ±20 V, and power dissipation up to 380 W at 25°C case temperature. It is a lead-free HEXFET power MOSFET designed for industrial applications and includes characterized capacitance, avalanche, and switching parameters.
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Infineon IRFB260NPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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