N-Channel Power MOSFET featuring a 60V drain-source voltage and a continuous drain current of 120A. This silicon Metal-Oxide Semiconductor FET offers a low on-resistance of 0.003 ohms. Designed with a single element and three terminals, it utilizes a TO-220AB package. Maximum operating temperature reaches 175°C.
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Technical Specifications
Infineon IRFB3206PBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRFB3206PBF Datasheet
Download the complete datasheet for Infineon IRFB3206PBF to view detailed technical specifications.
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