N-Channel Power MOSFET featuring a 60V drain-source voltage and a continuous drain current of 120A. This silicon Metal-Oxide Semiconductor FET offers a low on-resistance of 0.003 ohms. Designed with a single element and three terminals, it utilizes a TO-220AB package. Maximum operating temperature reaches 175°C.
Quick Jump:
Technical Specifications
Infineon IRFB3206PBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFB3206PBF Datasheet
Download the complete datasheet for Infineon IRFB3206PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.