This device is an N-channel HEXFET power MOSFET rated for 150 V drain-to-source voltage. It provides 12 mΩ typical and 15 mΩ maximum on-resistance at a 10 V gate drive and supports up to 85 A continuous drain current at 25 °C case temperature. The part is supplied in a TO-220AB package and is designed for industrial applications such as motion control, synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and hard-switched high-frequency circuits. It has a ±30 V gate-to-source rating, fully characterized avalanche SOA, and a maximum junction temperature of 175 °C.
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Infineon IRFB4321PBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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