N-channel power MOSFET featuring 150V drain-source voltage and 51A continuous drain current. Offers a low on-resistance of 0.032 ohms for efficient power switching. Designed with a single element and three terminals, this silicon Metal-Oxide Semiconductor FET operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB plastic housing, it is lead-free.
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Infineon IRFB52N15DPBF technical specifications.
| Max Operating Temperature | 175 |
| Number of Terminals | 3 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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