N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.
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Infineon IRFB7430PBF technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-220 |
| Package/Case | TO-220AB |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 4.83(Max) |
| Package Height (mm) | 9.02(Max) |
| Seated Plane Height (mm) | 20.57(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-220AB |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 409A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Drain Source Resistance | 1.3@10VmOhm |
| Typical Gate Charge @ Vgs | 300@10VnC |
| Typical Gate Charge @ 10V | 300nC |
| Typical Input Capacitance @ Vds | 14240@25VpF |
| Maximum Power Dissipation | 375000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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