The IRFB7546PbF is a single-channel N-channel enhancement power MOSFET with a maximum drain source voltage of 60V and a maximum continuous drain current of 75A. It features a HEXFET process technology and a typical input capacitance of 3000pF at 25V. The device operates over a temperature range of -55°C to 175°C and is packaged in a TO-220AB package.
PackageTO-220AB
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Technical Specifications
Infineon IRFB7546PbF technical specifications.
General
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 60V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 75A |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Drain Source Resistance | 7.3@10VmOhm |
| Typical Gate Charge @ Vgs | 58@10VnC |
| Typical Gate Charge @ 10V | 58nC |
| Typical Input Capacitance @ Vds | 3000@25VpF |
| Maximum Power Dissipation | 99000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
| Pin Count | 3 |
| Package/Case | TO-220AB |
| Package Family Name | TO-220 |
Compliance
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRFB7546PbF Datasheet
Download the complete datasheet for Infineon IRFB7546PbF to view detailed technical specifications.
No datasheet is available for this part.