Infineon
IRFB812PBF
Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Technical Specifications
Infineon IRFB812PBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
SINGLE
JEDEC Package Code
TO-220AB
Number of Elements
1
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFB812PBF Datasheet
Download the complete datasheet for Infineon IRFB812PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.