Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
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Infineon IRFB812PBF technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-220AB |
| Number of Elements | 1 |
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
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