N-channel Power MOSFET featuring HEXFET process technology. This surface-mount component offers a maximum drain-source voltage of 25V and a continuous drain current of 45A. It is housed in an 8-pin PQFN EP package with dimensions of 5mm x 6mm x 0.81mm. Key electrical characteristics include a low drain-source on-resistance of 1.15mOhm at 10V and a maximum power dissipation of 3600mW.
PackagePQFN EP
MountingSurface Mount
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Technical Specifications
Infineon IRFH5250TR2PBF technical specifications.
General
Package Family Name
QFN
Package/Case
PQFN EP
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
0.81
Seated Plane Height (mm)
0.83
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
25V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
45A
Maximum Drain Source Resistance
1.15@10VmOhm
Typical Gate Charge @ Vgs
110@10V|[email protected]nC
Typical Gate Charge @ 10V
110nC
Typical Input Capacitance @ Vds
7174@13VpF
Maximum Power Dissipation
3600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFH5250TR2PBF Datasheet
Download the complete datasheet for Infineon IRFH5250TR2PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.