N-channel Power MOSFET, 30V Drain-Source Voltage, 15A Continuous Drain Current. Features 8.1mΩ Max Drain-Source On-Resistance at 10V Vgs. Surface mountable in an 8-pin PQFN package (5x6mm) with 1.27mm pin pitch. Single Quad Drain Triple Source configuration utilizing HEXFET process technology. Maximum power dissipation of 3600mW.
PackagePQFN
MountingSurface Mount
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Technical Specifications
Infineon IRFH5306TR2PBF technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
QFN
Package/Case
PQFN
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
15A
Maximum Gate Threshold Voltage
2.35V
Maximum Drain Source Resistance
8.1@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1125@15VpF
Maximum Power Dissipation
3600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
230pF
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFH5306TR2PBF Datasheet
Download the complete datasheet for Infineon IRFH5306TR2PBF to view detailed technical specifications.
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