N-channel Power MOSFET, 30V Drain-Source Voltage, 15A Continuous Drain Current. Features 8.1mΩ Max Drain-Source On-Resistance at 10V Vgs. Surface mountable in an 8-pin PQFN package (5x6mm) with 1.27mm pin pitch. Single Quad Drain Triple Source configuration utilizing HEXFET process technology. Maximum power dissipation of 3600mW.
Infineon IRFH5306TR2PBF technical specifications.
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | QFN |
| Package/Case | PQFN |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Maximum Gate Threshold Voltage | 2.35V |
| Maximum Drain Source Resistance | 8.1@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1125@15VpF |
| Maximum Power Dissipation | 3600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 230pF |
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
No datasheet is available for this part.
