IRFH8324TRPBF

This device is a single N-channel HEXFET power MOSFET rated for 30 V drain-to-source voltage and packaged in a low-profile 5 mm x 6 mm PQFN. It is intended for synchronous MOSFET use in high-frequency buck converters and offers low on-resistance of 4.1 mΩ maximum at 10 V gate drive and 6.3 mΩ maximum at 4.5 V. The MOSFET supports up to 23 A continuous drain current at 25°C ambient and up to 50 A at 25°C case temperature, with a maximum junction temperature of 150°C. It also provides low thermal resistance to the PCB, typical total gate charge of 14 nC, and MSL1 consumer qualification with RoHS-compliant construction.