Infineon
IRFHM830DTRPBF
Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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Technical Specifications
Infineon IRFHM830DTRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
5
Min Operating Temperature
-55
Terminal Position
DUAL
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRFHM830DTRPBF Datasheet
Download the complete datasheet for Infineon IRFHM830DTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.